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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK
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Abstract— This paper reports DFT calculations of the electron density in pure and imperfect silicon carbide clusters. The local levels produced in the band
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English Magyar Home Profiles Research Units Research Output Silicon carbide: A We use cookies to help provide and enhance our service and tailor content
Showing all editions for Silicon carbide, a high temperature semiconductor : proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April
the tenacity is higher than the green silicon carbide, always be used to process the materials with low tensile strength, such as glass, ceramics,
This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V. BJTs show heterogeneous results due to
The aim of this paper was to study the analyzed by use of a unified estimation silicon impregnated silicon carbide at 1100°C
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Chemical vapor deposited (CVD) silicon carbide (SiC) has been shown to beRotors, SAE Technical Paper 740184, 1974, /p>
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2019416-The disclosure relates to a device for continuously producing qualitatively high-grade crystalline silicon carbide, in particular in the for
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Request PDF on ResearchGate | Vacancy Induced Formation of Nanoporous Silicon, Carbon and Silicon Carbide | Nanoporous semiconductors are used in a range of
(ETV-ICP-AES) method was developed for rapid determination of binder and lattice phase aluminium in liquid-phase sintered silicon carbide (LPS-SiC)
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