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silicone carbide in hong kong

Research Progress in Surface Modification of Silicon Carbide

The Hong Kong University of Science and Technology (Hong Kong, CN) calcium carbonate powder and silicon carbide powder were mixed in a round

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Understanding the Chemistry in Silicon Carbide Chemical Vapor

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behavior of reaction-bonded silicon carbide ceramics in

Weon-Ju Kim; Ho Soo Hwang; Ji Yeon Park, 2002: Corrosion behavior of reaction-bonded silicon carbide ceramics in high-temperature water Silicon infil

Lattice thermal conductivity in cubic silicon carbide

The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the

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of Gate Leakage Current Mechanism in Silicon Carbide (SiC)

Extraction and Analysis of Gate Leakage Current Mechanism in Silicon Carbide (SiC) MIS Capacitors Papanasam EsakkiBinsu J. Kailath

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Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

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Silicon carbide is a highly covalent ceramic, so additives like carbon and boron must be present in order to obtain a dense material during sintering

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Nanoparticles into Biomass‐Derived Silicon Oxycarbides

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Hydrogen evolution in hydrogenated microcrystalline silicon carbide thin films doi:10.1116/1.5090174Journal of Vacuum Science Technology BSoumia NemmourSiha

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of Silicon-Carbide Polytypes and the Band Offsets in

On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes

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