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Abstract: Silicon carbide (SiC) fibre generation is reported to occur during commercial SiC crystal production. Dust levels and fibre concentrations were
Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened
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PROBLEM TO BE SOLVED: To provide a method for manufacturing a good quality silicon carbide (SiC) single crystal at a high growth rate by using a
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