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On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes
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Download Citation on ResearchGate | On Jan 1, 1960, D.R. Hamilton and others published The growth of silicon carbide by sublimation Citations 3
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The present invention relates to a technique for forming silicon carbide coated porous filters for use in filtering molten metal, especially copper and
Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of
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